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aluminium nitride
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Aluminium nitride (AlN) is a nitride of aluminium. Its wurtzite phase (w-AlN) is a wide band gap (6.01-6.05 eV at room temperature) semiconductor material, giving it potential application for deep ultraviolet optoelectronics.
==History==
AlN was first synthesized in 1877, but it was not until the middle of the 1980s that its potential for application in microelectronics was realized due to its relative high thermal conductivity for an electrical insulating ceramic (70–210 W·m−1·K−1 for polycrystalline material, and as high as 285 W·m−1·K−1 for single crystals).
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